FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW1210HC100JGT | 10µH | 5% | 22 | 6.8 | |
| FHW1210HC100KGT | 10µH | 10% | 22 | 6.8 | |
| FHW1008UC100JGT | 10µH | 5% | 20 | 9.1 | |
| FHW1008UC100KGT | 10µH | 10% | 20 | 9.1 | |
| FHW1210HC8R6JGT | 8.6µH | 5% | 20 | 9 | |
| FHW1210HC8R6KGT | 8.6µH | 10% | 20 | 9 | |
| FHW1210HC8R2KGT | 8.2µH | 10% | 20 | 8.6 | |
| FHW1210HC8R2JGT | 8.2µH | 5% | 20 | 8.6 | |
| FHW1008UC8R2JGT | 8.2µH | 5% | 18 | 8.2 | |
| FHW1008UC8R2KGT | 8.2µH | 10% | 18 | 8.2 | |
| FHW1210HC7R5JGT | 7.5µH | 5% | 20 | 8.5 | |
| FHW1210HC7R5KGT | 7.5µH | 10% | 20 | 8.5 | |
| FHW1008UC7R5KGT | 7.5µH | 10% | 18 | 8 | |
| FHW1008UC7R5JGT | 7.5µH | 5% | 18 | 8 | |
| FHW1210HC6R8JGT | 6.8µH | 5% | 20 | 8 |