FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1210IF151JST | 150µH | ±5% | 8@0.796MHz | 锡端头 | 9 | |
| FHW1210IF680JST | 68µH | ±5% | 10@2.52MHz | 锡端头 | 4.7 | |
| FHW1210IF390JST | 39µH | ±5% | 10@2.52MHz | 锡端头 | 4.7 | |
| FHW1210IF330JST | 33µH | ±5% | 10@2.52MHz | 锡端头 | 2.9 | |
| FHW0806PF100KST | 10µH | 锡端头 | ||||
| FHW1210HC100JGB | 10µH | ±5% | 22@7.9MHz | 20 | 6.8 | |
| FHW1210HC100KGT | 10µH | ±10% | 22@7.9MHz | 20 | 6.8 | |
| FHW1210HC100JGT | 10µH | ±5% | 22@7.9MHz | 20 | 6.8 | |
| FHW1008UC100KGT | 10µH | ±10% | 20@7.9MHz | 40 | 9.1 | |
| FHW1008UC100JGB | 10µH | ±5% | 20@7.9MHz | 40 | 9.1 | |
| FHW1008UC100JGT | 10µH | ±5% | 20@7.9MHz | 40 | 9.1 | |
| FHW1210IF8R2JST | 8.2µH | ±5% | 12@7.96MHz | 锡端头 | 1.6 | |
| FHW1210HC8R2KGT | 8.2µH | ±10% | 20@7.9MHz | 50 | 8.6 | |
| FHW1210HC8R2JST | 8.2µH | ±5% | 20@7.9MHz | 50 | 8.6 | |
| FHW1210HC8R2JGT | 8.2µH | ±5% | 20@7.9MHz | 50 | 8.6 |