FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW0805UC1R5GGB | 1.5µH | ±2% | 18@50MHz | 170 | 2.8 | |
| FHW0805UC1R5KGB | 1.5µH | ±10% | 18@50MHz | 170 | 2.8 | |
| FHW1210HC1R2FGB | 1.2µH | 35@150MHz | 220 | 1.87 | ||
| FHW1210HC1R2JGB | 1.2µH | ±5% | 35@150MHz | 220 | 1.87 | |
| FHW1210HC1R2KGB | 1.2µH | ±10% | 35@150MHz | 220 | 1.87 | |
| FHW1210HC1R2KST | 1.2µH | ±10% | 35@150MHz | 220 | 1.87 | |
| FHW1210HC1R2GGT | 1.2µH | ±2% | 35@150MHz | 220 | 1.87 | |
| FHW1210HC1R2FGT | 1.2µH | 35@150MHz | 220 | 1.87 | ||
| FHW1210HC1R2KGT | 1.2µH | ±10% | 35@150MHz | 220 | 1.87 | |
| FHW1210HC1R2JGT | 1.2µH | ±5% | 35@150MHz | 220 | 1.87 | |
| FHW1210HC1R2KSB | 1.2µH | ±10% | 35@150MHz | 220 | 1.87 | |
| FHW1008UC1R2GGT | 1.2µH | ±2% | 35@50MHz | 200 | 2 | |
| FHW1008UC1R2KGB | 1.2µH | ±10% | 35@50MHz | 200 | 2 | |
| FHW1008UC1R2GGB | 1.2µH | ±2% | 35@50MHz | 200 | 2 | |
| FHW1008UC1R2KGT | 1.2µH | ±10% | 35@50MHz | 200 | 2 |