FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1210HC1R0GGB | 1.0µH | ±2% | 45@150MHz | 340 | 1.85 | |
| FHW1210HC1R0JGT | 1.0µH | ±5% | 45@150MHz | 340 | 1.85 | |
| FHW1210HC1R0JGTAEG | 1.0µH | ±5% | 45@150MHz | 340 | 1.85 | |
| FHW1210HC1R0JGB | 1.0µH | ±5% | 45@150MHz | 340 | 1.85 | |
| FHW1210HC1R0GGT | 1.0µH | ±2% | 45@150MHz | 340 | 1.85 | |
| FHW1210HC1R0JSTAEG | 1.0µH | ±5% | 45@150MHz | 340 | 1.85 | |
| FHW1008UC1R0FGB | 1.0µH | 35@50MHz | 210 | 1.75 | ||
| FHW1008UC1R0GGB | 1.0µH | ±2% | 35@50MHz | 210 | 1.75 | |
| FHW1008UC1R0KGT | 1.0µH | ±10% | 35@50MHz | 210 | 1.75 | |
| FHW1008UC1R0JGT | 1.0µH | ±5% | 35@50MHz | 210 | 1.75 | |
| FHW1008UC1R0GGT | 1.0µH | ±2% | 35@50MHz | 210 | 1.75 | |
| FHW1008UC1R0FGT | 1.0µH | 35@50MHz | 210 | 1.75 | ||
| FHW1008UC1R0KGB | 1.0µH | ±10% | 35@50MHz | 210 | 1.75 | |
| FHW1008UC1R0JGB | 1.0µH | ±5% | 35@50MHz | 210 | 1.75 | |
| FHW0805UC1R0JGB | 1.0µH | ±5% | 20@50MHz | 200 | 2.4 |