FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW0805UCR91KGT | 910nH | ±10% | 20@50MHz | 220 | 2.28 | |
| FHW0805UCR91GGT | 910nH | ±2% | 20@50MHz | 220 | 2.28 | |
| FHW1210HCR82KGB | 820nH | ±10% | 45@150MHz | 370 | 1.82 | |
| FHW1210HCR82JGB | 820nH | ±5% | 45@150MHz | 370 | 1.82 | |
| FHW1210HCR82JGT | 820nH | ±5% | 45@150MHz | 370 | 1.82 | |
| FHW1210HCR82GGT | 820nH | ±2% | 45@150MHz | 370 | 1.82 | |
| FHW1210HCR82KGT | 820nH | ±10% | 45@150MHz | 370 | 1.82 | |
| FHW1008UCR82KGB | 820nH | ±10% | 45@100MHz | 250 | 1.61 | |
| FHW1008UCR82JGT | 820nH | ±5% | 45@100MHz | 250 | 1.61 | |
| FHW1008UCR82JGB | 820nH | ±5% | 45@100MHz | 250 | 1.61 | |
| FHW1008UCR82GGB | 820nH | ±2% | 45@100MHz | 250 | 1.61 | |
| FHW1008UCR82FGT | 820nH | 45@100MHz | 250 | 1.61 | ||
| FHW1008UCR82GGT | 820nH | ±2% | 45@100MHz | 250 | 1.61 | |
| FHW1008UCR82KGT | 820nH | ±10% | 45@100MHz | 250 | 1.61 | |
| FHW1008UCR82FGB | 820nH | 45@100MHz | 250 | 1.61 |