FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW0805UCR82GGT | 820nH | ±2% | 23@50MHz | 250 | 2.14 | |
| FHW0805UCR82KGT | 820nH | ±10% | 23@50MHz | 250 | 2.14 | |
| FHW0805UCR82JGT | 820nH | ±5% | 23@50MHz | 250 | 2.14 | |
| FHW0805UCR82JGTAEG | 820nH | ±5% | 23@50MHz | 250 | 2.14 | |
| FHW0805UCR82GGB | 820nH | ±2% | 23@50MHz | 250 | 2.14 | |
| FHW0805UCR82JGB | 820nH | ±5% | 23@50MHz | 250 | 2.14 | |
| FHW0805UCR82KGB | 820nH | ±10% | 23@50MHz | 250 | 2.14 | |
| FHW1210HCR75JGB | 750nH | ±5% | 45@150MHz | 380 | 1.7 | |
| FHW1210HCR75GGT | 750nH | ±2% | 45@150MHz | 380 | 1.7 | |
| FHW1210HCR75JGT | 750nH | ±5% | 45@150MHz | 380 | 1.7 | |
| FHW1210HCR75KGB | 750nH | ±10% | 45@150MHz | 380 | 1.7 | |
| FHW1210HCR75KGT | 750nH | ±10% | 45@150MHz | 380 | 1.7 | |
| FHW0805UCR75KGB | 750nH | ±10% | 23@50MHz | 280 | 2.12 | |
| FHW0805UCR75GGT | 750nH | ±2% | 23@50MHz | 280 | 2.12 | |
| FHW0805UCR75KGT | 750nH | ±10% | 23@50MHz | 280 | 2.12 |