FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1008UCR68FGB | 680nH | 45@100MHz | 375 | 1.47 | ||
| FHW0805UCR68JGT | 680nH | ±5% | 23@50MHz | 300 | 2.1 | |
| FHW0805UCR68JGTAEG | 680nH | ±5% | 23@50MHz | 300 | 2.1 | |
| FHW0805UCR68GGT | 680nH | ±2% | 23@50MHz | 300 | 2.1 | |
| FHW0805UCR68KGB | 680nH | ±10% | 23@50MHz | 300 | 2.1 | |
| FHW0805UCR68JGB | 680nH | ±5% | 23@50MHz | 300 | 2.1 | |
| FHW0805UCR68JGTCAG | 680nH | ±5% | 23@50MHz | 300 | 2.1 | |
| FHW0805UCR68GGB | 680nH | ±2% | 23@50MHz | 300 | 2.1 | |
| FHW0805UCR68KGT | 680nH | ±10% | 23@50MHz | 300 | 2.1 | |
| FHW0603UFR62KST | 620nH | 锡端头 | ||||
| FHW1210HCR56JGB | 560nH | ±5% | 45@150MHz | 420 | 1.1 | |
| FHW1210HCR56KGB | 560nH | ±10% | 45@150MHz | 420 | 1.1 | |
| FHW1210HCR56JGT | 560nH | ±5% | 45@150MHz | 420 | 1.1 | |
| FHW1210HCR56KGT | 560nH | ±10% | 45@150MHz | 420 | 1.1 | |
| FHW1210HCR56GGT | 560nH | ±2% | 45@150MHz | 420 | 1.1 |