FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1210HC5R6JGB | 5.6µH | ±5% | 20@7.9MHz | 60 | 5 | |
| FHW1210HC5R6KGT | 5.6µH | ±10% | 20@7.9MHz | 60 | 5 | |
| FHW1210HC5R6JGT | 5.6µH | ±5% | 20@7.9MHz | 60 | 5 | |
| FHW1008UC5R6KGT | 5.6µH | ±10% | 18@7.9MHz | 55 | 7.6 | |
| FHW1008UC5R6KGB | 5.6µH | ±10% | 18@7.9MHz | 55 | 7.6 | |
| FHW1008UC5R6JGB | 5.6µH | ±5% | 18@7.9MHz | 55 | 7.6 | |
| FHW1008UC5R6JGT | 5.6µH | ±5% | 18@7.9MHz | 55 | 7.6 | |
| FHW0805PF4R7KST | 4.7µH | 锡端头 | ||||
| FHW0604PF4R7KST | 4.7µH | 锡端头 | ||||
| FHW0604PF4R7KST-WIP | 4.7µH | 锡端头 | ||||
| FHW0604PF4R7KST-ZWIP | 4.7µH | 锡端头 | ||||
| FHW1210HC4R7KGT | 4.7µH | ±10% | 16@25MHz | 60 | 4 | |
| FHW1210HC4R7JGT | 4.7µH | ±5% | 16@25MHz | 60 | 4 | |
| FHW1210HC4R7JGB | 4.7µH | ±5% | 16@25MHz | 60 | 4 | |
| FHW1210HC4R7KGB | 4.7µH | ±10% | 16@25MHz | 60 | 4 |