FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW1210HC3R9GGT | 3.9µH | 2% | 20 | 3.6 | |
| FHW1210HC3R9JGT | 3.9µH | 5% | 20 | 3.6 | |
| FHW1008UC3R9KGT | 3.9µH | 10% | 16 | 3.6 | |
| FHW1008UC3R9JGT | 3.9µH | 5% | 16 | 3.6 | |
| FHW1008UC3R9GGT | 3.9µH | 2% | 16 | 3.6 | |
| FHW1210HC3R5KGT | 3.5µH | 10% | 20 | 3.2 | |
| FHW1210HC3R5JGT | 3.5µH | 5% | 20 | 3.2 | |
| FHW1210HC3R5GGT | 3.5µH | 2% | 20 | 3.2 | |
| FHW1210HC3R3JGT | 3.3µH | 5% | 20 | 3.12 | |
| FHW1210HC3R3KGT | 3.3µH | 10% | 20 | 3.12 | |
| FHW1210HC3R3GGT | 3.3µH | 2% | 20 | 3.12 | |
| FHW1008UC3R3KGT | 3.3µH | 10% | 22 | 3.4 | |
| FHW1008UC3R3JGT | 3.3µH | 5% | 22 | 3.4 | |
| FHW1008UC3R3GGT | 3.3µH | 2% | 22 | 3.4 | |
| FHW1008UC3R0GGT | 3.0µH | 2% | 22 | 3.3 |