FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
;
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
---|---|---|---|---|---|---|
FHW0805UCR10JGTAEG | 100nH | ±5% | 50@500MHz | 1200 | 0.46 | |
FHW0805UCR10JST | 100nH | ±5% | 50@500MHz | 1200 | 0.46 | |
FHW0805UCR10GGT | 100nH | ±2% | 50@500MHz | 1200 | 0.46 | |
FHW0805UCR10KGB | 100nH | ±10% | 50@500MHz | 1200 | 0.46 | |
FHW0805UCR10GGB | 100nH | ±2% | 50@500MHz | 1200 | 0.46 | |
FHW0805UCR10GGTDEG | 100nH | ±2% | 50@500MHz | 1200 | 0.46 | |
FHW0805UCR10KGT | 100nH | ±10% | 50@500MHz | 1200 | 0.46 | |
FHW0805UCR10FGT | 100nH | 50@500MHz | 1200 | 0.46 | ||
FHW0805UCR10FGB | 100nH | 50@500MHz | 1200 | 0.46 | ||
FHW0805UCR10JGT | 100nH | ±5% | 50@500MHz | 1200 | 0.46 | |
FHW0805UCR10JGB | 100nH | ±5% | 50@500MHz | 1200 | 0.46 | |
FHW1210HC082KGT | 82nH | ±10% | 55@300MHz | 1000 | 0.2 | |
FHW1210HC082JGB | 82nH | ±5% | 55@300MHz | 1000 | 0.2 | |
FHW1210HC082KGB | 82nH | ±10% | 55@300MHz | 1000 | 0.2 | |
FHW1210HC082JGT | 82nH | ±5% | 55@300MHz | 1000 | 0.2 |