FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1008UC4R7KGT | 4.7µH | ±10% | 18@25MHz | 60 | 4 | |
| FHW1008UC4R7JGB | 4.7µH | ±5% | 18@25MHz | 60 | 4 | |
| FHW1008UC4R7JGT | 4.7µH | ±5% | 18@25MHz | 60 | 4 | |
| FHW1008UC4R7GGT | 4.7µH | ±2% | 18@25MHz | 60 | 4 | |
| FHW1008UC4R7KGB | 4.7µH | ±10% | 18@25MHz | 60 | 4 | |
| FHW1008UC4R7GGB | 4.7µH | ±2% | 18@25MHz | 60 | 4 | |
| FHW1210HC3R9KGB | 3.9µH | ±10% | 20@25MHz | 80 | 3.6 | |
| FHW1210HC3R9FGB | 3.9µH | 20@25MHz | 80 | 3.6 | ||
| FHW1210HC3R9JGB | 3.9µH | ±5% | 20@25MHz | 80 | 3.6 | |
| FHW1210HC3R9JGT | 3.9µH | ±5% | 20@25MHz | 80 | 3.6 | |
| FHW1210HC3R9FGT | 3.9µH | 20@25MHz | 80 | 3.6 | ||
| FHW1210HC3R9GGT | 3.9µH | ±2% | 20@25MHz | 80 | 3.6 | |
| FHW1210HC3R9KGT | 3.9µH | ±10% | 20@25MHz | 80 | 3.6 | |
| FHW1008UC3R9KGT | 3.9µH | ±10% | 16@25MHz | 60 | 3.6 | |
| FHW1008UC3R9JGT | 3.9µH | ±5% | 16@25MHz | 60 | 3.6 |