FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1008UC3R9KGB | 3.9µH | ±10% | 16@25MHz | 60 | 3.6 | |
| FHW1008UC3R9KGT | 3.9µH | ±10% | 16@25MHz | 60 | 3.6 | |
| FHW1210IF3R3JST | 3.3µH | ±5% | 12@7.96MHz | 锡端头 | 1.1 | |
| FHW1210HC3R3GGT | 3.3µH | ±2% | 20@25MHz | 85 | 3.12 | |
| FHW1210HC3R3JGB | 3.3µH | ±5% | 20@25MHz | 85 | 3.12 | |
| FHW1210HC3R3KGB | 3.3µH | ±10% | 20@25MHz | 85 | 3.12 | |
| FHW1210HC3R3GGB | 3.3µH | ±2% | 20@25MHz | 85 | 3.12 | |
| FHW1210HC3R3JGT | 3.3µH | ±5% | 20@25MHz | 85 | 3.12 | |
| FHW1210HC3R3KGT | 3.3µH | ±10% | 20@25MHz | 85 | 3.12 | |
| FHW1008UC3R3JGT | 3.3µH | ±5% | 22@25MHz | 70 | 3.4 | |
| FHW1008UC3R3GGB | 3.3µH | ±2% | 22@25MHz | 70 | 3.4 | |
| FHW1008UC3R3JGB | 3.3µH | ±5% | 22@25MHz | 70 | 3.4 | |
| FHW1008UC3R3GGT | 3.3µH | ±2% | 22@25MHz | 70 | 3.4 | |
| FHW1008UC3R3KGB | 3.3µH | ±10% | 22@25MHz | 70 | 3.4 | |
| FHW1008UC3R3KGT | 3.3µH | ±10% | 22@25MHz | 70 | 3.4 |