FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|
| FHW1008UC2R2GGT | 2.2µH | 2% | 20 | 2.8 | |
| FHW1008UC2R2JGT | 2.2µH | 5% | 20 | 2.8 | |
| FHW0805UC2R2KGT | 2.2µH | 10% | 16 | 4.2 | |
| FHW0805UC2R2JGT | 2.2µH | 5% | 16 | 4.2 | |
| FHW1008UC2R0KGT | 2.0µH | 10% | 20 | 2.8 | |
| FHW1008UC2R0GGT | 2.0µH | 2% | 20 | 2.8 | |
| FHW1008UC2R0JGT | 2.0µH | 5% | 20 | 2.8 | |
| FHW1210HC1R8GGT | 1.8µH | 2% | 30 | 2.25 | |
| FHW1210HC1R8JGT | 1.8µH | 5% | 30 | 2.25 | |
| FHW1210HC1R8KGT | 1.8µH | 10% | 30 | 2.25 | |
| FHW1008UC1R8GGT | 1.8µH | 2% | 28 | 2.6 | |
| FHW1008UC1R8JGT | 1.8µH | 5% | 28 | 2.6 | |
| FHW1008UC1R8KGT | 1.8µH | 10% | 28 | 2.6 | |
| FHW0805UC1R8JGT | 1.8µH | 5% | 18 | 3.8 | |
| FHW0805UC1R8KGT | 1.8µH | 10% | 18 | 3.8 |