FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW0805UC010JGTAEG | 10nH | ±5% | 50@500MHz | 4200 | 0.15 | |
| FHW0805UC010GST | 10nH | ±2% | 50@500MHz | 4200 | 0.15 | |
| FHW0805UC010MGB | 10nH | ±20% | 50@500MHz | 4200 | 0.15 | |
| FHW0805UC010KGT | 10nH | ±10% | 50@500MHz | 4200 | 0.15 | |
| FHW0805UC010MGT | 10nH | ±20% | 50@500MHz | 4200 | 0.15 | |
| FHW0805UC010JGB | 10nH | ±5% | 50@500MHz | 4200 | 0.15 | |
| FHW0805UC010JGT | 10nH | ±5% | 50@500MHz | 4200 | 0.15 | |
| FHW0805UC010JGTCEG | 10nH | ±5% | 50@500MHz | 4200 | 0.15 | |
| FHW0805UC010GGT | 10nH | ±2% | 50@500MHz | 4200 | 0.15 | |
| FHW1210HC8N2JGB | 8.2nH | ±5% | 30@300MHz | 5500 | 0.07 | |
| FHW1210HC8N2KGB | 8.2nH | ±10% | 30@300MHz | 5500 | 0.07 | |
| FHW1210HC8N2JGT | 8.2nH | ±5% | 30@300MHz | 5500 | 0.07 | |
| FHW1210HC8N2KGT | 8.2nH | ±10% | 30@300MHz | 5500 | 0.07 | |
| FHW1008UC8N2KGT | 8.2nH | ±10% | 50@1000MHz | 5000 | 0.05 | |
| FHW1008UC8N2MGT | 8.2nH | ±20% | 50@1000MHz | 5000 | 0.05 |