FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1008UC8N2GGT | 8.2nH | ±2% | 50@1000MHz | 5000 | 0.05 | |
| FHW1008UC8N2KGB | 8.2nH | ±10% | 50@1000MHz | 5000 | 0.05 | |
| FHW1008UC8N2JGB | 8.2nH | ±5% | 50@1000MHz | 5000 | 0.05 | |
| FHW1008UC8N2MGB | 8.2nH | ±20% | 50@1000MHz | 5000 | 0.05 | |
| FHW1008UC8N2JGT | 8.2nH | ±5% | 50@1000MHz | 5000 | 0.05 | |
| FHW0805UC8N2JGB | 8.2nH | ±5% | 35@1000MHz | 4700 | 0.2 | |
| FHW0805UC8N2SGT | 8.2nH | ±0.3nH | 35@1000MHz | 4700 | 0.2 | |
| FHW0805UC8N2JGTAEG | 8.2nH | ±5% | 35@1000MHz | 4700 | 0.2 | |
| FHW0805UC8N2MGT | 8.2nH | ±20% | 35@1000MHz | 4700 | 0.2 | |
| FHW0805UC8N2KGT | 8.2nH | ±10% | 35@1000MHz | 4700 | 0.2 | |
| FHW0805UC8N2JGT | 8.2nH | ±5% | 35@1000MHz | 4700 | 0.2 | |
| FHW0805UC8N2GST | 8.2nH | ±2% | 35@1000MHz | 4700 | 0.2 | |
| FHW0805UC8N2GGT | 8.2nH | ±2% | 35@1000MHz | 4700 | 0.2 | |
| FHW0805UC8N2DGT | 8.2nH | ±0.5nH | 35@1000MHz | 4700 | 0.2 | |
| FHW0805UC8N2KGB | 8.2nH | ±10% | 35@1000MHz | 4700 | 0.2 |