FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW0805UC4N7MGB | 4.7nH | ±20% | 40@1000MHz | 6000 | 0.05 | |
| FHW0805UC4N7JGT | 4.7nH | ±5% | 40@1000MHz | 6000 | 0.05 | |
| FHW0805UC4N7JGB | 4.7nH | ±5% | 40@1000MHz | 6000 | 0.05 | |
| FHW0805UC4N7JGTAEG | 4.7nH | ±5% | 40@1000MHz | 6000 | 0.05 | |
| FHW0805UC4N7MGT | 4.7nH | ±20% | 40@1000MHz | 6000 | 0.05 | |
| FHW0805UC4N7SGT | 4.7nH | ±0.3nH | 40@1000MHz | 6000 | 0.05 | |
| FHW1210HC3N9JGT | 3.9nH | ±5% | 30@300MHz | 6000 | 0.05 | |
| FHW1210HC3N9KGB | 3.9nH | ±10% | 30@300MHz | 6000 | 0.05 | |
| FHW1210HC3N9JGB | 3.9nH | ±5% | 30@300MHz | 6000 | 0.05 | |
| FHW1210HC3N9KGT | 3.9nH | ±10% | 30@300MHz | 6000 | 0.05 | |
| FHW1008UC3N9JGB | 3.9nH | ±5% | 50@1500MHz | 6000 | 0.035 | |
| FHW1008UC3N9KGB | 3.9nH | ±10% | 50@1500MHz | 6000 | 0.035 | |
| FHW1008UC3N9JGT | 3.9nH | ±5% | 50@1500MHz | 6000 | 0.035 | |
| FHW1008UC3N9KGT | 3.9nH | ±10% | 50@1500MHz | 6000 | 0.035 | |
| FHW1008UC3N9GGT | 3.9nH | ±2% | 50@1500MHz | 6000 | 0.035 |