FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW0805UC3N3JGT | 3.3nH | ±5% | 35@1500MHz | 7900 | 0.09 | |
| FHW0805UC3N3MGB | 3.3nH | ±20% | 35@1500MHz | 7900 | 0.09 | |
| FHW0805UC3N3KGB | 3.3nH | ±10% | 35@1500MHz | 7900 | 0.09 | |
| FHW0805UC3N3DGT | 3.3nH | ±0.5nH | 35@1500MHz | 7900 | 0.09 | |
| FHW0805UC3N3KGTAEG | 3.3nH | ±10% | 35@1500MHz | 7900 | 0.09 | |
| FHW0805UC3N3SGT | 3.3nH | ±0.3nH | 35@1500MHz | 7900 | 0.09 | |
| FHW0805UC3N3KGT | 3.3nH | ±10% | 35@1500MHz | 7900 | 0.09 | |
| FHW0805UC3N3MGT | 3.3nH | ±20% | 35@1500MHz | 7900 | 0.09 | |
| FHW0805UC3N3GGT | 3.3nH | ±2% | 35@1500MHz | 7900 | 0.09 | |
| FHW0805UC2N7JGT | 2.7nH | ±5% | 50@1500MHz | 8000 | 0.045 | |
| FHW0805UC2N7JGB | 2.7nH | ±5% | 50@1500MHz | 8000 | 0.045 | |
| FHW0805UC2N7KGB | 2.7nH | ±10% | 50@1500MHz | 8000 | 0.045 | |
| FHW0805UC2N7GGT | 2.7nH | ±2% | 50@1500MHz | 8000 | 0.045 | |
| FHW0805UC2N7SGT | 2.7nH | ±0.3nH | 50@1500MHz | 8000 | 0.045 | |
| FHW0805UC2N7KGT | 2.7nH | ±10% | 50@1500MHz | 8000 | 0.045 |