FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1210HC2R7JGB | 2.7µH | ±5% | 25@25MHz | 100 | 2.85 | |
| FHW1210HC2R7GGT | 2.7µH | ±2% | 25@25MHz | 100 | 2.85 | |
| FHW1210HC2R7FGT | 2.7µH | 25@25MHz | 100 | 2.85 | ||
| FHW1210HC2R7KGT | 2.7µH | ±10% | 25@25MHz | 100 | 2.85 | |
| FHW1210HC2R7FGB | 2.7µH | 25@25MHz | 100 | 2.85 | ||
| FHW1210HC2R7KGB | 2.7µH | ±10% | 25@25MHz | 100 | 2.85 | |
| FHW1210HC2R7JGT | 2.7µH | ±5% | 25@25MHz | 100 | 2.85 | |
| FHW1008UC2R7GGT | 2.7µH | ±2% | 22@25MHz | 80 | 3.2 | |
| FHW1008UC2R7GGB | 2.7µH | ±2% | 22@25MHz | 80 | 3.2 | |
| FHW1008UC2R7KGT | 2.7µH | ±10% | 22@25MHz | 80 | 3.2 | |
| FHW1008UC2R7KGB | 2.7µH | ±10% | 22@25MHz | 80 | 3.2 | |
| FHW1008UC2R7JGT | 2.7µH | ±5% | 22@25MHz | 80 | 3.2 | |
| FHW1008UC2R7JGB | 2.7µH | ±5% | 22@25MHz | 80 | 3.2 | |
| FHW1210IF2R2JST | 2.2µH | ±5% | 12@7.96MHz | 锡端头 | 0.6 | |
| FHW0604PF2R2KST-CN | 2.2µH | 锡端头 |