FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW0604PF2R2KST | 2.2µH | 锡端头 | ||||
| FHW1210HC2R2JGT | 2.2µH | ±5% | 30@50MHz | 110 | 2.41 | |
| FHW1210HC2R2KGT | 2.2µH | ±10% | 30@50MHz | 110 | 2.41 | |
| FHW1210HC2R2JGB | 2.2µH | ±5% | 30@50MHz | 110 | 2.41 | |
| FHW1210HC2R2KGB | 2.2µH | ±10% | 30@50MHz | 110 | 2.41 | |
| FHW1210HC2R2GGT | 2.2µH | ±2% | 30@50MHz | 110 | 2.41 | |
| FHW1210HC2R2JGTAEG | 2.2µH | ±5% | 30@50MHz | 110 | 2.41 | |
| FHW1008UC2R2GGT | 2.2µH | ±2% | 20@50MHz | 90 | 2.8 | |
| FHW1008UC2R2KGT | 2.2µH | ±10% | 20@50MHz | 90 | 2.8 | |
| FHW1008UC2R2JGT | 2.2µH | ±5% | 20@50MHz | 90 | 2.8 | |
| FHW1008UC2R2KGB | 2.2µH | ±10% | 20@50MHz | 90 | 2.8 | |
| FHW1008UC2R2GGB | 2.2µH | ±2% | 20@50MHz | 90 | 2.8 | |
| FHW1008UC2R2JGB | 2.2µH | ±5% | 20@50MHz | 90 | 2.8 | |
| FHW0805UC2R2JGB | 2.2µH | ±5% | 16@7.9MHz | 50 | 4.2 | |
| FHW0805UC2R2JGTAEG | 2.2µH | ±5% | 16@7.9MHz | 50 | 4.2 |