FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW0805UC2R2JGB | 2.2µH | ±5% | 16@7.9MHz | 50 | 4.2 | |
| FHW0805UC2R2JGTAEG | 2.2µH | ±5% | 16@7.9MHz | 50 | 4.2 | |
| FHW0805UC2R2KGT | 2.2µH | ±10% | 16@7.9MHz | 50 | 4.2 | |
| FHW0805UC2R2GGT | 2.2µH | ±2% | 16@7.9MHz | 50 | 4.2 | |
| FHW1210HC1R8JGB | 1.8µH | ±5% | 30@50MHz | 160 | 2.25 | |
| FHW1210HC1R8JGT | 1.8µH | ±5% | 30@50MHz | 160 | 2.25 | |
| FHW1210HC1R8GGT | 1.8µH | ±2% | 30@50MHz | 160 | 2.25 | |
| FHW1210HC1R8KGB | 1.8µH | ±10% | 30@50MHz | 160 | 2.25 | |
| FHW1210HC1R8KGT | 1.8µH | ±10% | 30@50MHz | 160 | 2.25 | |
| FHW1210HC1R8KYT | 1.8µH | ±10% | 30@50MHz | 160 | 2.25 | |
| FHW1210HC1R8FGT | 1.8µH | 30@50MHz | 160 | 2.25 | ||
| FHW1008UC1R8FGB | 1.8µH | 28@50MHz | 160 | 2.6 | ||
| FHW1008UC1R8GGT | 1.8µH | ±2% | 28@50MHz | 160 | 2.6 | |
| FHW1008UC1R8FGT | 1.8µH | 28@50MHz | 160 | 2.6 | ||
| FHW1008UC1R8JGB | 1.8µH | ±5% | 28@50MHz | 160 | 2.6 |