FEATURES
Minature size, suitable for SMT;
Using terminal electrode structure to restrain the
parasitic component effect quite caused by lead;
；
Execellent in solderability and heat resistance.
High Q value and Tight inductance tolerance
APPLICATIONS
Portable communication equipment and PDA;
High speed electronic device;
RF Wireless Data Communication Module,W-LAN.
| Part Number | Inductance | Tolerance | Q Value | Self-Resonant Frequency | DCR Max | Datasheet |
|---|---|---|---|---|---|---|
| FHW1008UC1R8KGT | 1.8µH | ±10% | 28@50MHz | 160 | 2.6 | |
| FHW1008UC1R8JGT | 1.8µH | ±5% | 28@50MHz | 160 | 2.6 | |
| FHW1008UC1R8KGB | 1.8µH | ±10% | 28@50MHz | 160 | 2.6 | |
| FHW0805UC1R8KGT | 1.8µH | ±10% | 18@50MHz | 140 | 3.8 | |
| FHW0805UC1R8JGT | 1.8µH | ±5% | 18@50MHz | 140 | 3.8 | |
| FHW0805UC1R8FGB | 1.8µH | 18@50MHz | 140 | 3.8 | ||
| FHW0805UC1R8GGT | 1.8µH | ±2% | 18@50MHz | 140 | 3.8 | |
| FHW0805UC1R8FGT | 1.8µH | 18@50MHz | 140 | 3.8 | ||
| FHW0805UC1R8JGB | 1.8µH | ±5% | 18@50MHz | 140 | 3.8 | |
| FHW0805UC1R8JGTAEG | 1.8µH | ±5% | 18@50MHz | 140 | 3.8 | |
| FHW1210HC1R5MGT | 1.5µH | ±20% | 30@50MHz | 160 | 1.95 | |
| FHW1210HC1R5FGT | 1.5µH | 30@50MHz | 160 | 1.95 | ||
| FHW1210HC1R5JGB | 1.5µH | ±5% | 30@50MHz | 160 | 1.95 | |
| FHW1210HC1R5KGB | 1.5µH | ±10% | 30@50MHz | 160 | 1.95 | |
| FHW1210HC1R5GGT | 1.5µH | ±2% | 30@50MHz | 160 | 1.95 |